A Compact Hybrid G-band Heterodyne Receiver Integrated with Millimeter Microwave Integrated Circuits and Schottky Diode-Based Circuits

نویسندگان

چکیده

This paper presents a compact hybrid G-band (170–260 GHz) heterodyne receiver module incorporating both Millimeter Microwave Integrated Circuits (MMICs) and Schottky diode-based circuit. An on-chip sextupler Low Noise Amplifier (LNA), along with Sub-Harmonic Mixer (SHM), are integrated into the demonstrated singular module, which is carefully designed arranged co-simulations in electromagnetic thermal domain. Through this methodology, terahertz fabricated volume of only 27 × 20 mm3. The measured results indicate that double-sideband conversion gain 10.5–17.5 dB from 195 GHz to 230 GHz, while noise temperature 1009–1158 K. As result, provides recorded miniaturized hardware applicable for Integration Sensing Communication (ISAC) systems.

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Microwave and Millimeter-Wave Integrated Circuits

A historical sketch of microwave integrated circuits, monolithic microwave integrated circuits, and their application is presented in this paper.

متن کامل

Millimeter-wave Integrated Circuits a Preview or an Overview on Monolithic Microwave Integrated Circuits (mmic)

With the ever-increasing demand on wireless spectrum by wide bandwidth applications, such as 3G mobile phones at RF frequencies, Multipoint Video Distribution System (MVDS) and Local Multipoint Distribution System (LMDS) in the millimeter-wave frequency range, there is a growing need to exploit higher and higher frequencies. So, mmwave field is becoming a rapidly emerging area of research. Keyw...

متن کامل

Si and SiGe Millimeter-Wave Integrated Circuits

Monolithic integrated millimeter-wave circuits based on silicon and SiGe are emerging as an attractive option in the field of millimeter-wave communications and millimeterwave sensorics. The combination of active devices with passive planar structures, including also antenna elements, allows single-chip realizations of complete millimeter-wave front-ends. This paper reviews the state-of-the-art...

متن کامل

A MEMS Capacitive Microphone Modelling for Integrated Circuits

In this paper, a model for MEMS capacitive microphone is presented for integrated circuits.  The microphone has a diaphragm thickness of 1 μm, 0.5 × 0.5 mm2 dimension, and an air gap of 1.0 μm. Using the analytical and simulation results, the important features of MEMS capacitive microphone such as pull-in voltage and sensitivity are obtained 3.8v and 6.916 mV/Pa, respectively while there is no...

متن کامل

GaN WIDE BAND POWER INTEGRATED CIRCUITS (PREPRINT)

Gallium Nitride (GaN) amplifiers have demonstrated very high power density as well as wide band width in previous research. This paper examines their use in supplying flat gain, power, and linearity across a large band width. It demonstrates two types of power amplifiers: a Ft Doubler (FT2) amplifier and a Cascode amplifier, both of which require a simple PCB tune. Both amplifiers show 0.2 to 4...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Electronics

سال: 2023

ISSN: ['2079-9292']

DOI: https://doi.org/10.3390/electronics12132806